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PolarHV TM HiPerFET
Power MOSFET
ISOPLUS220 TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFC 110N10P
V DSS = 100 V
I D25 = 60 A
R DS(on) ≤ 17 m ?
t rr ≤ 150 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS220 TM (IXFC)
V DSS
V DGR
V GSS
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Continuous
100
100
± 20
V
V
V
E153432
V GSM
I D25
Transient
T C = 25 ° C
± 30
60
V
A
G
D
S
Isolated back surface
I DM
I AR
E AR
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
250
60
40
1.0
A
A
mJ
J
G = Gate
S = Source
Features
D = Drain
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS t = 1 minute leads-to-tab
10
120
-55 ... +175
175
-55 ... +150
300
260
2500
V/ns
W
° C
° C
° C
° C
° C
V~
l
l
l
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
F C
Weight
Mounting Force
11..65 / 2.5..15
2
N/lb
g
Applications
l
l
l
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Easy assembly: no screws, or isolation
Symbol          Test Conditions
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
100 V
l
l
Advantages
l
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.5
5.0
± 100
25
250
V
nA
μ A
μ A
l
l
l
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
R DS(on)
V GS = 10 V, I D = 55 A
17
m ?
? 2006 IXYS All rights reserved
DS99370E(03/06)
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